JPH0416019B2 - - Google Patents
Info
- Publication number
- JPH0416019B2 JPH0416019B2 JP8585285A JP8585285A JPH0416019B2 JP H0416019 B2 JPH0416019 B2 JP H0416019B2 JP 8585285 A JP8585285 A JP 8585285A JP 8585285 A JP8585285 A JP 8585285A JP H0416019 B2 JPH0416019 B2 JP H0416019B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- groove
- silicon
- silicon substrate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000005360 phosphosilicate glass Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009271 trench method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8585285A JPS61244043A (ja) | 1985-04-22 | 1985-04-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8585285A JPS61244043A (ja) | 1985-04-22 | 1985-04-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61244043A JPS61244043A (ja) | 1986-10-30 |
| JPH0416019B2 true JPH0416019B2 (en]) | 1992-03-19 |
Family
ID=13870400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8585285A Granted JPS61244043A (ja) | 1985-04-22 | 1985-04-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61244043A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2556128B2 (ja) * | 1989-02-28 | 1996-11-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP2006324644A (ja) * | 2005-04-18 | 2006-11-30 | Nec Electronics Corp | 半導体装置の製造方法 |
-
1985
- 1985-04-22 JP JP8585285A patent/JPS61244043A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61244043A (ja) | 1986-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |